Dual Gate HEMT: Compact Cascode for Low-Noise Amplification

被引：0
|
作者：
Bonomo, Giorgio [1 ]
Ciabattini, Filippo [1 ]
Saranovac, Tamara [1 ]
Kostelac, Fran [1 ]
Hamzeloui, Sara [1 ]
Marti, Diego [1 ]
Fluckiger, Ralf [1 ]
Ostinelli, Olivier J. S. [1 ]
Bolognesi, Colombo R. [1 ]
机构：
[1] D ITET ETHZ, Millimeter Wave Elect Grp, Zurich, Switzerland
来源：
2024 15TH GLOBAL SYMPOSIUM ON MILLIMETER-WAVES & TERAHERTZ, GSMM | 2024年
关键词：
High Electron Mobility Transistor (HEMT); low-noise; associated gain; cascade; dual gate;
D O I：
10.1109/GSMM61775.2024.10553216
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present work compares single-gate (SG) and dual-gate (DG) HEMTs from a low-noise amplification perspective. Experimental results, obtained through RF and noise measurements in the 5 to 50 GHz range, reveal a significant boost of similar to 6 dB in the associated gain for the DG-HEMT compared to the conventional SG-HEMT. The biasing characteristics of the DG-HEMT offer an additional degree of freedom, relaxing the traditionally rigid constraints on the relationship between minimum noise figure and gain.
引用
收藏
页码：234 / 236
页数：3
相关论文
共 50 条
  • [21] A compact approach for the design of a dual-band low-noise amplifier
    Sharaf, KM
    Elhak, HY
    PROCEEDINGS OF THE 44TH IEEE 2001 MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2, 2001, : 890 - 893
  • [22] Design and analysis of broadband dual-gate balanced low-noise amplifiers
    Deal, William R.
    Biedenbender, Michael
    Liu, Po-hsin
    Uyeda, Jansen
    Siddiqui, Mansoor
    Lai, Richard
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (10) : 2107 - 2115
  • [23] HEMT FOR LOW-NOISE MICROWAVES - CAD ORIENTED MODELING
    CADDEMI, A
    MARTINES, G
    SANNINO, M
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (07) : 1441 - 1445
  • [24] On the optimization and design of SiGe HBT cascode low-noise amplifiers
    Liang, QQ
    Niu, GF
    Cressler, JD
    Taylor, S
    Harame, DL
    SOLID-STATE ELECTRONICS, 2005, 49 (03) : 329 - 341
  • [25] 36.0 - 40.0 GHZ HEMT LOW-NOISE AMPLIFIER
    SHOLLEY, M
    BERENZ, J
    NAKANO, K
    SAWIRES, R
    NICHOLS, A
    ABELL, J
    MICROWAVE JOURNAL, 1985, 28 (05) : 92 - &
  • [26] STRIPED-CHANNEL LOW-NOISE PSEUDOMORPHIC HEMT
    KAWASAKI, H
    ISHIMURA, H
    TOKUDA, H
    IEICE TRANSACTIONS ON COMMUNICATIONS ELECTRONICS INFORMATION AND SYSTEMS, 1991, 74 (12): : 4110 - 4113
  • [27] A FULLY INTEGRATED LOW-NOISE HEMT CHARGE PREAMPLIFIER
    BERTUCCIO, G
    DEGERONIMO, G
    LONGONI, A
    LAUXTERMANN, S
    RUNGE, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1995, 365 (2-3): : 592 - 595
  • [28] Compact Low-Noise Photonic Microwave Generation From Commercial Low-Noise Lasers
    Bouchand, Romain
    Xie, Xiaopeng
    Giunta, Michele
    Haensel, Wolfgang
    Lezius, Matthias
    Holzwarth, Ronald
    Alexandre, Christophe
    Tremblin, Pierre-Alain
    Santarelli, Giorgio
    Le Coq, Yann
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2017, 29 (16) : 1403 - 1406
  • [29] Low-Noise Dual-Frequency Laser for Compact Cs Atomic Clocks
    Dumont, Paul
    Camargo, Fabiola
    Danet, Jean-Marie
    Holleville, David
    Guerandel, Stephane
    Pillet, Gregoire
    Baili, Ghaya
    Morvan, Loic
    Dolfi, Daniel
    Gozhyk, Iryna
    Beaudoin, Gregoire
    Sagnes, Isabelle
    Georges, Patrick
    Lucas-Leclin, Gaelle
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2014, 32 (20) : 3817 - 3823
  • [30] A Compact Low DC Consumption 24-GHz Cascode HEMT VGA
    Tsai, Zuo-Min
    Kao, Jui-Chi
    Lin, Kun-You
    Wang, Huei
    APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2009, : 1625 - +
12345