Dual Gate HEMT: Compact Cascode for Low-Noise Amplification

被引：0
|
作者：
Bonomo, Giorgio [1 ]
Ciabattini, Filippo [1 ]
Saranovac, Tamara [1 ]
Kostelac, Fran [1 ]
Hamzeloui, Sara [1 ]
Marti, Diego [1 ]
Fluckiger, Ralf [1 ]
Ostinelli, Olivier J. S. [1 ]
Bolognesi, Colombo R. [1 ]
机构：
[1] D ITET ETHZ, Millimeter Wave Elect Grp, Zurich, Switzerland
来源：
2024 15TH GLOBAL SYMPOSIUM ON MILLIMETER-WAVES & TERAHERTZ, GSMM | 2024年
关键词：
High Electron Mobility Transistor (HEMT); low-noise; associated gain; cascade; dual gate;
D O I：
10.1109/GSMM61775.2024.10553216
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present work compares single-gate (SG) and dual-gate (DG) HEMTs from a low-noise amplification perspective. Experimental results, obtained through RF and noise measurements in the 5 to 50 GHz range, reveal a significant boost of similar to 6 dB in the associated gain for the DG-HEMT compared to the conventional SG-HEMT. The biasing characteristics of the DG-HEMT offer an additional degree of freedom, relaxing the traditionally rigid constraints on the relationship between minimum noise figure and gain.
引用
收藏
页码：234 / 236
页数：3
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