DETERMINATION OF THE DEEP LEVELS AND OBSERVATION OF THE DEFECT LEVEL RELATED TO IRON IN SILICON BY USE OF THE DLTS METHOD

被引：0
|
作者：
SUN, YC [1 ]
WANG, ZJ [1 ]
BINDANG, J [1 ]
机构：
[1] HEBEI SEMICOND INST,HEBEI,PEOPLES R CHINA
来源：
MATERIALS LETTERS | 1989年 / 8卷 / 3-4期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：101 / 104
页数：4
相关论文
共 50 条
  • [31] ROLE OF FIELD EFFECTS IN A DETERMINATION OF THE CONCENTRATION OF THERMAL DONORS IN SILICON BY DLTS METHOD
    KOMAROV, BA
    KORSHUNOV, FP
    MURIN, LI
    SEMICONDUCTORS, 1994, 28 (03) : 305 - 309
  • [32] Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy
    Johnston, Steven W.
    Jordan, Dirk C.
    Kern, Dana B.
    Colvin, Dylan J.
    Davis, Kristopher O.
    Moutinho, Helio R.
    Kroeger, George F.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2023, 262
  • [33] Degradation-related Defect Level in Weathered Silicon Heterojunction Modules Characterized by Deep Level Transient Spectroscopy
    Johnston, Steve
    Jordan, Dirk C.
    Kern, Dana B.
    Davis, Kristopher O.
    Moutinho, Helio R.
    Kroeger, George F.
    2023 IEEE 50TH PHOTOVOLTAIC SPECIALISTS CONFERENCE, PVSC, 2023,
  • [34] DETERMINATION OF THE ENTROPY-FACTOR OF THE GOLD DONOR LEVEL IN SILICON BY RESISTIVITY AND DLTS MEASUREMENTS
    KASSING, R
    COHAUSZ, L
    VANSTAA, P
    MACKERT, W
    HOFFMAN, HJ
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (01): : 41 - 47
  • [35] OBSERVATION OF DEEP LEVELS IN CUBIC SILICON-CARBIDE
    ZHOU, PZ
    SPENCER, MG
    HARRIS, GL
    FEKADE, K
    APPLIED PHYSICS LETTERS, 1987, 50 (19) : 1384 - 1385
  • [36] DEEP LEVELS IN SILICON BY PSEUDOPOTENTIAL METHOD
    GLODEANU, A
    REVUE ROUMAINE DE PHYSIQUE, 1965, 10 (03): : 371 - &
  • [37] The Deep Level Defects with Boron Atoms Configuration in Amorphous Silicon Solar Cells by DLTS and XPS
    Lee, Sunhwa
    Park, Jinjoo
    Yi, Junsin
    Jeong, Chaehwan
    SCIENCE OF ADVANCED MATERIALS, 2018, 10 (03) : 389 - 392
  • [38] INTERPRETATION OF DLTS EMISSION AND CAPTURE DATA OF THE CO-RELATED DEEP LEVEL IN GAP
    KANIEWSKI, J
    KANIEWSKA, M
    JEZEWSKI, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (02): : 745 - 753
  • [39] Deep defect levels in CuInSe2 single crystals using DLTS, MCTS and photoacoustic spectroscopy
    Benhenni, Azidine
    Satour, Fatima Zohra
    Zouaoui, Ahmed
    Zegadi, Ameur
    INFRARED PHYSICS & TECHNOLOGY, 2019, 99 : 172 - 177
  • [40] PALLADIUM-RELATED DEEP LEVELS IN SILICON
    GILL, AA
    IQBAL, MZ
    ZAFAR, N
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (05) : 675 - 681
12345