DETERMINATION OF THE DEEP LEVELS AND OBSERVATION OF THE DEFECT LEVEL RELATED TO IRON IN SILICON BY USE OF THE DLTS METHOD

被引：0
|
作者：
SUN, YC [1 ]
WANG, ZJ [1 ]
BINDANG, J [1 ]
机构：
[1] HEBEI SEMICOND INST,HEBEI,PEOPLES R CHINA
来源：
MATERIALS LETTERS | 1989年 / 8卷 / 3-4期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：101 / 104
页数：4
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