ION-BEAM INDUCED ISOLATION OF GALLIUM-ARSENIDE LAYERS

被引：3
|
作者：
SENGUPTA, D [1 ]
ZEMANSKI, JM [1 ]
WILLIAMS, JS [1 ]
JOHNSON, ST [1 ]
POGANY, AP [1 ]
机构：
[1] ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE 3000,AUSTRALIA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 42卷 / 03期
关键词：
D O I：
10.1016/0168-583X(89)90443-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：328 / 333
页数：6
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