ION-BEAM INDUCED ISOLATION OF GALLIUM-ARSENIDE LAYERS

被引：3

作者：

SENGUPTA, D ^{[1
]}

ZEMANSKI, JM ^{[1
]}

WILLIAMS, JS ^{[1
]}

JOHNSON, ST ^{[1
]}

POGANY, AP ^{[1
]}

机构：

[1] ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE 3000,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 42卷 / 03期

关键词：

D O I：

10.1016/0168-583X(89)90443-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：328 / 333

页数：6

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