共 50 条
- [1] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605
- [2] GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING IN BORON-TRICHLORIDE ARGON MIXTURES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1599 - 1605
- [3] RESTRUCTURING OF ALUMINUM ON GALLIUM-ARSENIDE IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1978, 1 (04): : 432 - 433
- [5] GALLIUM ALUMINUM ARSENIDE GALLIUM-ARSENIDE INTEGRATED OPTICAL REPEATER PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 466 : 65 - 68
- [6] REACTIVE ION ETCHING OF GALLIUM-ARSENIDE NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 496 - 499
- [8] PHOTOLUMINESCENCE OF ALUMINUM-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1292 - 1292
- [9] INTERACTION BETWEEN ALUMINUM AND GALLIUM-ARSENIDE SURFACE DOKLADY AKADEMII NAUK SSSR, 1982, 266 (05): : 1105 - 1107