DISTRIBUTION OF CONDENSED DEFECT STRUCTURES FORMED IN ANNEALED BORON-IMPLANTED SILICON

被引：18
|
作者：
BICKNELL, RW
机构：
来源：
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1969年 / 311卷 / 1504期
关键词：
D O I：
10.1098/rspa.1969.0101
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
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页码：75 / &
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