DISTRIBUTION OF CONDENSED DEFECT STRUCTURES FORMED IN ANNEALED BORON-IMPLANTED SILICON

被引：18
|
作者：
BICKNELL, RW
机构：
来源：
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1969年 / 311卷 / 1504期
关键词：
D O I：
10.1098/rspa.1969.0101
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：75 / &
相关论文
共 50 条
  • [21] ELECTRICALLY INACTIVE GRAIN-BOUNDARIES IN RAPID THERMAL ANNEALED BORON-IMPLANTED POLYCRYSTALLINE SILICON FILMS
    ALMAGGOUSSI, A
    SICART, J
    ROBERT, JL
    CHAUSSEMY, G
    LAUGIER, A
    APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2536 - 2538
  • [22] RAMAN-SCATTERING FROM BORON-IMPLANTED SILICON
    FORMAN, RA
    MYERS, DR
    BELL, MI
    HOROWITZ, D
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 222 - 222
  • [23] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP
    NISHIYAMA, K
    ARAI, M
    WATANABE, N
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L563 - L566
  • [24] CONDUCTIVITY OF BORON-IMPLANTED POLYCRYSTALLINE THIN SILICON FILMS
    MANSOUR, F
    BOUCHEMAT, M
    BOUKEZZATA, M
    TOUIDJEN, NH
    BIELLEDASPET, D
    MIROUH, K
    THIN SOLID FILMS, 1995, 261 (1-2) : 12 - 17
  • [25] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON
    NARAYAN, J
    HOLLAND, OW
    EBY, RE
    WORTMAN, JJ
    OZGUZ, V
    ROZGONYI, GA
    APPLIED PHYSICS LETTERS, 1983, 43 (10) : 957 - 959
  • [26] A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON
    DUENAS, S
    CASTAN, E
    BARBOLLA, J
    MONTSERRAT, J
    TAMAYO, EL
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 47 - 50
  • [27] ANNEALING CHARACTERISTICS OF BORON-IMPLANTED AND PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON
    SETO, JYW
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5167 - 5170
  • [28] Metal gettering by boron-silicide precipitates in boron-implanted silicon
    Myers, S.M.
    Petersen, G.A.
    Headley, T.J.
    Michael, J.R.
    Aselage, T.L.
    Seager, C.H.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1997, 127-128 : 291 - 296
  • [29] Metal gettering by boron-silicide precipitates in boron-implanted silicon
    Myers, SM
    Petersen, GA
    Headley, TJ
    Michael, JR
    Aselage, TL
    Seager, CH
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 291 - 296
  • [30] TEMPERATURE-DEPENDENCE OF DAMAGE IN BORON-IMPLANTED SILICON
    OTTAVIANI, G
    NAVA, F
    TONINI, R
    FRABBONI, S
    CEROFOLINI, GF
    CANTONI, P
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 85 - 90
12345