DISTRIBUTION OF CONDENSED DEFECT STRUCTURES FORMED IN ANNEALED BORON-IMPLANTED SILICON

被引：18
|
作者：
BICKNELL, RW
机构：
来源：
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1969年 / 311卷 / 1504期
关键词：
D O I：
10.1098/rspa.1969.0101
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：75 / &
相关论文
共 50 条
  • [31] ON THE THEORY OF TRANSIENT ENHANCED DIFFUSION IN BORON-IMPLANTED SILICON
    ANTONCIK, E
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 116 (04): : 375 - 387
  • [32] DEEP-LEVEL TRAPS IN LOW-DOSE BORON-IMPLANTED AND LOW-TEMPERATURE ANNEALED SILICON
    MITIC, A
    SATO, T
    NISHI, H
    HASHIMOTO, H
    APPLIED PHYSICS LETTERS, 1980, 37 (08) : 727 - 729
  • [33] CHARACTERIZATION OF THE DAMAGE-INDUCED IN BORON-IMPLANTED AND RTA ANNEALED SILICON BY THE CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE
    DUENAS, S
    CASTAN, E
    ENRIQUEZ, L
    BARBOLLA, J
    MONTSERRAT, J
    LORATAMAYO, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (09) : 1637 - 1648
  • [34] MODELING OF SUPPRESSED DOPANT ACTIVATION IN BORON-IMPLANTED AND BF-IMPLANTED SILICON
    KINOSHITA, H
    HUANG, TH
    KWONG, DL
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) : 8213 - 8215
  • [35] Recombination processes in passivated boron-implanted black silicon emitters
    von Gastrow, Guillaume
    Ortega, Pablo
    Alcubilla, Ramon
    Husein, Sebastian
    Nietzold, Tara
    Bertoni, Mariana
    Savin, Hele
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (18)
  • [36] DIODE STRUCTURES FORMED BY RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON
    LUNNON, ME
    CHEN, JT
    BAKER, JE
    APPLIED PHYSICS LETTERS, 1985, 46 (01) : 35 - 37
  • [37] Toward Effective Gettering in Boron-Implanted Silicon Solar Cells
    Laine, Hannu S.
    Vahanissi, Ville
    Liu, Zhengjun
    Magana, Ernesto
    Morishige, Ashley E.
    Kruegener, Jan
    Salo, Kristian
    Lai, Barry
    Savin, Hele
    Fenning, David P.
    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 1494 - 1497
  • [38] DEFECT AND DOPANT DEPTH PROFILES IN BORON-IMPLANTED SILICON STUDIED WITH CHANNELING AND NUCLEAR-REACTION ANALYSIS
    VOS, M
    BOERMA, DO
    SMULDERS, PJM
    OOSTERHOFF, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 17 (03): : 234 - 241
  • [39] REDISTRIBUTION OF OXYGEN WITHIN DAMAGE REGIONS OF BORON-IMPLANTED SILICON
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    FURMAN, B
    EVANS, CA
    DAY, DS
    APPLIED PHYSICS LETTERS, 1981, 39 (03) : 260 - 262
  • [40] Near-field photocurrent measurements on boron-implanted silicon
    Marocchi, V
    Cricenti, A
    Perfetti, P
    Chiaradia, P
    Raineri, V
    Spinella, C
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) : 3937 - 3939
12345