DISLOCATIONS IN GAAS

被引：33
|
作者：
JACOB, G [1 ]
FARGES, JP [1 ]
SCHEMALI, C [1 ]
DUSEAUX, M [1 ]
HALLAIS, J [1 ]
BARTELS, WJ [1 ]
ROKSNOER, PJ [1 ]
机构：
[1] PHILIPS RES LABS,5600 MD EINDHOVEN,NETHERLANDS
来源：
JOURNAL OF CRYSTAL GROWTH | 1982年 / 57卷 / 02期
关键词：
D O I：
10.1016/0022-0248(82)90480-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：245 / 258
页数：14
相关论文
共 50 条
  • [31] DISLOCATIONS IN GAAS1-XPX
    MADER, S
    BLAKESLEE, AE
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1975, 19 (02) : 151 - 162
  • [32] Study of copper aggregations at dislocations in GaAs
    Leipner, HS
    Scholz, R
    Syrowatka, F
    Uniewski, H
    Schreiber, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3): : 185 - 188
  • [33] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS
    ABRAHAMS, MS
    BUIOCCHI, CJ
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1973 - &
  • [34] MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS
    ZHU, JG
    PALMSTROM, CJ
    CARTER, CB
    ACTA METALLURGICA ET MATERIALIA, 1995, 43 (11): : 4171 - 4177
  • [35] Interaction of copper and sulfur with dislocations in GaAs
    Engler, N
    Leipner, HS
    Scholz, RF
    Schreiber, J
    Werner, P
    BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000, 2000, 78-79 : 331 - 338
  • [36] MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE
    ZHU, JG
    PALMSTROM, CJ
    GARRISON, KC
    CARTER, CB
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 659 - 664
  • [37] ATOMIC-STRUCTURE OF DISLOCATIONS IN GAAS
    GERTHSEN, D
    PONCE, FA
    ANDERSON, GB
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 23 - 28
  • [38] MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE
    ZHU, JG
    PALMSTROM, CJ
    GARRISON, KC
    CARTER, CB
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 659 - 664
  • [39] INTERACTION OF DISLOCATIONS AND INDIUM IN GaAs.
    Yonenaga, I.
    Takebe, M.
    Sumino, K.
    Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1986, 51 (09): : 19 - 22
  • [40] STRUCTURES OF DISLOCATIONS IN GAAS AND THEIR MODIFICATION BY IMPURITIES
    SITCH, P
    JONES, R
    OBERG, S
    HEGGIE, MI
    PHYSICAL REVIEW B, 1994, 50 (23): : 17717 - 17720
12345