STRUCTURES OF DISLOCATIONS IN GAAS AND THEIR MODIFICATION BY IMPURITIES

被引：23

作者：

SITCH, P

JONES, R

OBERG, S

HEGGIE, MI

机构：

[1] UNIV LULEA,DEPT MATH,S-95187 LULEA,SWEDEN

[2] UNIV EXETER,DEPT COMP SCI,EXETER EX4 4PT,DEVON,ENGLAND

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.50.17717

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Local density functional theory is used to show that both α and β dislocations in GaAs are reconstructed. This is done by relaxing large 158-atom H-terminated clusters of GaAs containing 90°partial dislocations. The reconstruction is strongly influenced by impurities: acceptor pairs destroy the reconstruction of β partials but strengthen it for α dislocations. Donors have opposite effects. The implication of these results for the pinning of dislocations in GaAs is discussed. © 1994 The American Physical Society.

引用

页码：17717 / 17720

页数：4

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