MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE

被引：0
|
作者：
ZHU, JG [1 ]
PALMSTROM, CJ [1 ]
GARRISON, KC [1 ]
CARTER, CB [1 ]
机构：
[1] BELL COMMUN RES INC, RED BANK, NJ 07701 USA
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Single-crystal CoGa has been grown on GaAs(100) by molecular-beam epitaxy. The CoGa/GaAs interface has been characterized using weak-beam and high-resolution transmission electron microscopy. The misfit dislocations at the CoGa/GaAs interface are determined by the CoGa lattice. The interface dislocations in systems like CoGa/GaAs thus show important differences in comparison to those in the more extensively studied mismatched semiconductor systems.
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页码：659 / 664
页数：6
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