MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE

被引：0

作者：

ZHU, JG ^{[1
]}

PALMSTROM, CJ ^{[1
]}

GARRISON, KC ^{[1
]}

CARTER, CB ^{[1
]}

机构：

[1] BELL COMMUN RES INC, RED BANK, NJ 07701 USA

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Single-crystal CoGa has been grown on GaAs(100) by molecular-beam epitaxy. The CoGa/GaAs interface has been characterized using weak-beam and high-resolution transmission electron microscopy. The misfit dislocations at the CoGa/GaAs interface are determined by the CoGa lattice. The interface dislocations in systems like CoGa/GaAs thus show important differences in comparison to those in the more extensively studied mismatched semiconductor systems.

引用

页码：659 / 664

页数：6

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