MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE

被引：0

作者：

ZHU, JG ^{[1
]}

PALMSTROM, CJ ^{[1
]}

GARRISON, KC ^{[1
]}

CARTER, CB ^{[1
]}

机构：

[1] BELL COMMUN RES INC, RED BANK, NJ 07701 USA

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Single-crystal CoGa has been grown on GaAs(100) by molecular-beam epitaxy. The CoGa/GaAs interface has been characterized using weak-beam and high-resolution transmission electron microscopy. The misfit dislocations at the CoGa/GaAs interface are determined by the CoGa lattice. The interface dislocations in systems like CoGa/GaAs thus show important differences in comparison to those in the more extensively studied mismatched semiconductor systems.

引用

页码：659 / 664

页数：6

共 50 条

[41] Analysis of the distribution of misfit dislocations in InGaAs/GaAs single layers
MacPherson, G
Goodhew, PJ
ELECTRON MICROSCOPY AND ANALYSIS 1995, 1995, 147 : 381 - 384
[42] Strain relaxation in GaAs on Si by two groups of misfit dislocations
Tamura, M
Saitoh, T
Yodo, T
EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 437 - 442
[43] THE GEOMETRY OF MISFIT DISLOCATIONS WITH RESPECT TO THE STRAINED INTERFACE IN [001] IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
ZOU, J
COCKAYNE, DJH
JIANG, SS
JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7317 - 7322
[44] MISFIT DISLOCATIONS IN EPITAXIAL ZNTE/GAAS (001) STUDIED BY HRTEM
BAUER, S
ROSENAUER, A
LINK, P
KUHN, W
ZWECK, J
GEBHARDT, W
ULTRAMICROSCOPY, 1993, 51 (1-4) : 221 - 227
[45] Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures
Appl Phys Lett, 8 (1131):
[46] Atomic and electronic structure of misfit dislocations in GaSb/GaAs(001)
Miyagishima, N
Shinoda, T
Suzuki, K
Kaneko, T
Takeda, K
Shiraishi, K
Ito, T
PHYSICA B-CONDENSED MATTER, 2003, 340 : 1009 - 1012
[47] Misfit dislocations and stress in In1 − xGaxAs/GaAs heterostructures
I. V. Kurilo
S. K. Guba
Inorganic Materials, 2011, 47 : 819 - 823
[48] FERMI-LEVEL PINNING BY MISFIT DISLOCATIONS AT GAAS INTERFACES
WOODALL, JM
PETTIT, GD
JACKSON, TN
LANZA, C
KAVANAGH, KL
MAYER, JW
PHYSICAL REVIEW LETTERS, 1983, 51 (19) : 1783 - 1786
[49] Observation of misfit dislocations at the InxGa1-xAs/GaAs interface by ballistic-electron-emission microscopy
Lee, EY
Bhargava, S
Chin, MA
Narayanamura, V
Pond, KJ
Luo, K
APPLIED PHYSICS LETTERS, 1996, 69 (07) : 940 - 942
[50] Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface
Yu. B. Bolkhovityanov
A. P. Vasilenko
A. K. Gutakovskii
A. S. Deryabin
M. A. Putyato
L. V. Sokolov
Physics of the Solid State, 2011, 53 : 2005 - 2011

← 1 2 3 4 5 →