ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：54
|
作者：
UWAI, K
NAKAGOME, H
TAKAHEI, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期
关键词：
D O I：
10.1063/1.98814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1010 / 1012
页数：3
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