CHARACTERIZATION OF GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI-ON-INSULATOR

被引：6

作者：

PEARTON, SJ ^{[1
]}

VERNON, SM ^{[1
]}

SHORT, KT ^{[1
]}

BROWN, JM ^{[1
]}

ABERNATHY, CR ^{[1
]}

CARUSO, R ^{[1
]}

CHU, SNG ^{[1
]}

HAVEN, VE ^{[1
]}

BUNKER, SN ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 15期

关键词：

D O I：

10.1063/1.98728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1188 / 1190

页数：3

共 50 条

[1] CHARACTERIZATION OF GAAS FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SWAMINATHAN, V
VANHAREN, DL
ZILKO, JL
LU, PY
SCHUMAKER, NE
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5349 - 5353
[2] CHARACTERIZATION OF GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
PEARTON, SJ
VERNON, SM
ABERNATHY, CR
SHORT, KT
CARUSO, R
STAVOLA, M
GIBSON, JM
HAVEN, VE
WHITE, AE
JACOBSON, DC
JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 862 - 867
[3] HEAVILY SI-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FURUHATA, N
KAKIMOTO, K
YOSHIDA, M
KAMEJIMA, T
JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4692 - 4695
[4] HETEROINTERFACE STABILITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
PEARTON, SJ
MALM, DL
HEIMBROOK, LA
KOVALCHICK, J
ABERNATHY, CR
CARUSO, R
VERNON, SM
HAVEN, VE
APPLIED PHYSICS LETTERS, 1987, 51 (09) : 682 - 684
[5] ANTIPHASE DOMAINS IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON-ON-INSULATOR
CHU, SNG
NAKAHARA, S
PEARTON, SJ
BOONE, T
VERNON, SM
JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 2981 - 2989
[6] MAGNETOPHOTOLUMINESCENCE CHARACTERIZATION OF RESIDUAL DONORS IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
WATKINS, SP
HAACKE, G
BURKHARD, H
THEWALT, MLW
CHARBONNEAU, S
JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3205 - 3209
[7] CHARACTERIZATION OF GAAS GROWN SIMULTANEOUSLY ON SILICON-ON-SAPPHIRE AND SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FENG, MS
PAN, N
STILLMAN, GE
HOLONYAK, N
HSIEH, KC
MANASEVIT, HM
JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S38 - S38
[8] CHARACTERIZATION OF INP/GAAS/SI STRUCTURES GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
PEARTON, SJ
SHORT, KT
MACRANDER, AT
ABERNATHY, CR
MAZZI, VP
HAEGEL, NM
ALJASSIM, MM
VERNON, SM
HAVEN, VE
JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1083 - 1088
[9] GROWTH AND CHARACTERIZATION OF GAAS-LAYERS GROWN ON GE/SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FUKUDA, Y
KADOTA, Y
OHMACHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (04): : 485 - 488
[10] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
WANG, CH
CHENG, KY
YANG, SJ
APPLIED PHYSICS LETTERS, 1985, 46 (10) : 962 - 964

← 1 2 3 4 5 →