CHARACTERIZATION OF GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI-ON-INSULATOR

被引:6
|
作者
PEARTON, SJ [1 ]
VERNON, SM [1 ]
SHORT, KT [1 ]
BROWN, JM [1 ]
ABERNATHY, CR [1 ]
CARUSO, R [1 ]
CHU, SNG [1 ]
HAVEN, VE [1 ]
BUNKER, SN [1 ]
机构
[1] SPIRE CORP,BEDFORD,MA 01730
关键词
D O I
10.1063/1.98728
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1188 / 1190
页数:3
相关论文
共 50 条
  • [41] REACTIVE CHEMICAL INTERMEDIATES IN METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS
    KILLEEN, KP
    APPLIED PHYSICS LETTERS, 1992, 61 (15) : 1864 - 1866
  • [42] DEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, EK
    CHO, HY
    KIM, Y
    KIM, MS
    KIM, HS
    MIN, SK
    YOON, JH
    CHOH, SH
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) : 2454 - 2456
  • [43] EFFECTS OF DISLOCATION AND STRESS ON CHARACTERISTICS OF GAAS-BASED LASER GROWN ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    EGAWA, T
    HASEGAWA, Y
    JIMBO, T
    UMENO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (03): : 791 - 797
  • [44] CHARACTERISTICS OF SI-DOPED GAAS EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING A SILANE SOURCE
    LIU, CW
    CHEN, SL
    LAY, JP
    LEE, SC
    LIN, HH
    APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1634 - 1636
  • [45] GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    DUPUIS, RD
    BEAN, JC
    BROWN, JM
    MACRANDER, AT
    MILLER, RC
    HOPKINS, LC
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 69 - 77
  • [46] A PHOTOLUMINESCENCE STUDY OF HYDROGENATED GAAS GROWN ON AN INP SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SWAMINATHAN, V
    CHAKRABARTI, UK
    HOBSON, WS
    CARUSO, R
    LOPATA, J
    PEARTON, SJ
    LUFTMAN, HS
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) : 902 - 905
  • [47] PHOTOLUMINESCENCE IDENTIFICATION OF RESIDUAL DONORS IN UNDOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    WATKINS, SP
    HAACKE, G
    BURKHARD, H
    APPLIED PHYSICS LETTERS, 1988, 52 (05) : 401 - 403
  • [49] ELASTIC STRAINS IN CDTE-GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OLEGO, DJ
    PETRUZZELLO, J
    GHANDHI, SK
    TASKAR, NR
    BHAT, IB
    APPLIED PHYSICS LETTERS, 1987, 51 (02) : 127 - 129
  • [50] CHARACTERIZATION OF HEAVILY CARBON-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND METALORGANIC MOLECULAR-BEAM EPITAXY
    STOCKMAN, SA
    HOFLER, GE
    BAILLARGEON, JN
    HSIEH, KC
    CHENG, KY
    STILLMAN, GE
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) : 981 - 987