ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：54
|
作者：
UWAI, K
NAKAGOME, H
TAKAHEI, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期
关键词：
D O I：
10.1063/1.98814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1010 / 1012
页数：3
相关论文
共 50 条
  • [41] DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES
    VANDERZIEL, JP
    DUPUIS, RD
    LOGAN, RA
    PINZONE, CJ
    APPLIED PHYSICS LETTERS, 1987, 51 (02) : 89 - 91
  • [42] CRYSTALLINITY AND SCHOTTKY DIODE CHARACTERISTICS OF GAAS GROWN ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    EGAWA, T
    NOZAKI, S
    NOTO, N
    SOGA, T
    JIMBO, T
    UMENO, M
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 6908 - 6913
  • [43] LOW ETCH PIT DENSITY GAAS ON SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SOGA, T
    JIMBO, T
    UMENO, M
    APPLIED PHYSICS LETTERS, 1990, 56 (15) : 1433 - 1435
  • [44] PHOTOLUMINESCENCE IDENTIFICATION OF RESIDUAL DONORS IN UNDOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    WATKINS, SP
    HAACKE, G
    BURKHARD, H
    APPLIED PHYSICS LETTERS, 1988, 52 (05) : 401 - 403
  • [45] ZN AND SI DOPING IN (110) GAAS EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OKAMOTO, K
    FURUTA, M
    YAMAGUCHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2121 - L2124
  • [46] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP USING PHOSPHINE MODULATION
    LEE, MK
    HU, CC
    LIN, MH
    APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1245 - 1247
  • [47] CHARACTERIZATION OF SILICON IMPLANTED GAAS BUFFER LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KUECH, TF
    POTEMSKI, R
    CHAPPELL, TI
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1196 - 1203
  • [48] MICROPROBE PHOTOLUMINESCENCE MEASUREMENT ON HETEROEPITAXIAL GAAS ON SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, HS
    LEE, C
    TAKAI, M
    NAMBA, S
    MIN, SK
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (03): : 188 - 191
  • [49] ELASTIC STRAINS IN CDTE-GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OLEGO, DJ
    PETRUZZELLO, J
    GHANDHI, SK
    TASKAR, NR
    BHAT, IB
    APPLIED PHYSICS LETTERS, 1987, 51 (02) : 127 - 129
  • [50] SATURATION OF SI ATOM CONCENTRATION IN SI PLANAR-DOPED INP LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    ISHIKAWA, H
    MIWA, S
    MARUYAMA, T
    KAMADA, M
    APPLIED PHYSICS LETTERS, 1991, 58 (08) : 851 - 853
12345