ZERO-TEMPERATURE-COEFFICIENT (ZTC) BIASING OF POWER VDMOS TRANSISTORS

被引：8
|
作者：
PRIJIC, Z
PAVLOVIC, Z
RISTIC, S
STOJADINOVIC, N
机构：
[1] Faculty of Electronic Engineering, University of Niš, Beogradska 14
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 05期
关键词：
TRANSISTORS; FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19930291
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is shown that, in contrast to conventional MOSFETs, power VDMOS transistors exhibit a unique ZTC point only in the saturation region of operation. Also, an analytical expression for the ptc voltage for the ZTC biasing or power VDMOS transistors, leading to excellent agreement with experimental data, is derived.
引用
收藏
页码：435 / 437
页数：3
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