ASSESSMENT OF THE QUALITY OF ANODIC NATIVE OXIDES OF GAAS FOR MOS DEVICES

被引:16
|
作者
BREEZE, PA
HARTNAGEL, HL
机构
关键词
D O I
10.1016/0040-6090(79)90051-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:51 / 61
页数:11
相关论文
共 50 条
  • [41] Characterization Study of Native Oxides on GaAs(100) Surface by XPS
    Feng Liu
    Zhang Lian-dong
    Liu Hui
    Gao Xiang
    Miao Zhuang
    Cheng Hong-chang
    Wang Long
    Niu Sen
    INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2013: LOW-LIGHT-LEVEL TECHNOLOGY AND APPLICATIONS, 2013, 8912
  • [42] INTERACTION OF ATOMIC-HYDROGEN WITH NATIVE OXIDES ON GAAS(100)
    PETIT, EJ
    HOUZAY, F
    MOISON, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 2172 - 2177
  • [43] ENCAPSULATION OF ION-IMPLANTED GAAS USING NATIVE OXIDES
    SEALY, BJ
    DCRUZ, ADE
    ELECTRONICS LETTERS, 1975, 11 (15) : 323 - 324
  • [44] FRACTAL NATURE OF DEFECT CLUSTERING IN GATE OXIDES OF MOS DEVICES
    YADAVA, RDS
    BHAN, RK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) : 889 - 890
  • [45] INTERFACE-STATE BAND MODEL FOR GAAS AND GAP ANODIC MOS STRUCTURES
    HASEGAWA, H
    SAWADA, T
    SAKAI, T
    SURFACE SCIENCE, 1979, 86 (JUL) : 819 - 825
  • [46] DYNAMIC PROPERTIES OF INTERFACE-STATE BANDS IN GAAS ANODIC MOS SYSTEM
    HASEGAWA, H
    SAWADA, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1478 - 1482
  • [47] The Use of Anodic Oxides in Practical and Sustainable Devices for Energy Conversion and Storage
    Santos, Janaina Soares
    Araujo, Patricia dos Santos
    Pissolitto, Yasmin Bastos
    Lopes, Paula Prenholatto
    Simon, Anna Paulla
    Sikora, Mariana de Souza
    Trivinho-Strixino, Francisco
    MATERIALS, 2021, 14 (02) : 1 - 38
  • [48] Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices
    Martens, K.
    Wang, W. F.
    Dimoulas, A.
    Borghs, G.
    Meuris, M.
    Groeseneken, G.
    Maes, H. E.
    SOLID-STATE ELECTRONICS, 2007, 51 (08) : 1101 - 1108
  • [49] GaAs MOS STRUCTURE WITH NATIVE OXIDE GROWN BY WET ANODIZATION.
    Ahmad, S.
    Singh, R.
    Bawa, S.P.
    Journal of the Institution of Electronics and Telecommunication Engineers, 1979, 25 (12): : 487 - 490
  • [50] Nature and growth of anodic and thermal oxides on GaAs and AlxGa1-xAs
    Schmuki, P
    Hussey, RJ
    Sproule, GI
    Tao, Y
    Wasilewski, ZR
    McCaffrey, JP
    Graham, MJ
    CORROSION SCIENCE, 1999, 41 (08) : 1467 - 1474