CHARACTERISTICS OF DEFECT FORMATION IN SILICON AS A RESULT OF HIGH-ENERGY IMPLANTATION OF BORON

被引：0
|
作者：
ALBAKKUR, F
DIDYK, AY
KOZLOV, IP
ODZHAEV, VB
PETROV, VV
PROSOLOVICH, VS
SOKHATSKII, AS
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 10期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1109 / 1110
页数：2
相关论文
共 50 条
  • [41] HIGH-ENERGY ION-IMPLANTATION INTO SILICON - AN APPLICATION IN CMOS TECHNOLOGY
    GROUILLET, A
    VACUUM, 1989, 39 (2-4) : 163 - 167
  • [42] Negative annealing in silicon after the implantation of high-energy sodium ions
    Korol', V. M.
    Zastavnoi, A. V.
    Kudriavtsev, Yu.
    Asomoza, R.
    SEMICONDUCTORS, 2017, 51 (05) : 549 - 555
  • [43] Negative annealing in silicon after the implantation of high-energy sodium ions
    V. M. Korol’
    A. V. Zastavnoi
    Yu. Kudriavtsev
    R. Asomoza
    Semiconductors, 2017, 51 : 549 - 555
  • [44] Relaxation of a defect subsystem in silicon irradiated with high-energy heavy ions
    Smagulova, SA
    Antonova, IV
    Neustroev, EP
    Skuratov, VA
    SEMICONDUCTORS, 2003, 37 (05) : 546 - 550
  • [45] Relaxation of a defect subsystem in silicon irradiated with high-energy heavy ions
    S. A. Smagulova
    I. V. Antonova
    E. P. Neustroev
    V. A. Skuratov
    Semiconductors, 2003, 37 : 546 - 550
  • [46] SHALLOW JUNCTION FORMATION WITH BORON FLUORIDE AND LOW-ENERGY BORON ION-IMPLANTATION INTO SILICON
    LU, ZH
    ZHANG, CM
    LI, SJ
    LUO, Y
    ZHANG, HX
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 43 (01): : 46 - 49
  • [47] Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
    Venezia, VC
    Pelaz, L
    Gossmann, HJL
    Haynes, TE
    Rafferty, CS
    APPLIED PHYSICS LETTERS, 2001, 79 (09) : 1273 - 1275
  • [48] ATHERMAL ROLE OF THE DOSE-RATE IN THE KINETICS OF DEFECT FORMATION AS A RESULT OF IMPLANTATION OF PHOSPHORUS IONS IN SILICON
    ARZAMASTSEV, AP
    DANILIN, AB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (11): : 1306 - 1307
  • [49] On the formation of silicon wires produced by high-energy ion irradiation
    Dang, Z. Y.
    Song, J.
    Azimi, S.
    Breese, M. B. H.
    Forneris, J.
    Vittone, E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 296 : 32 - 40
  • [50] CHARACTERISTICS OF CMOS DEVICES IN HIGH-ENERGY BORON-IMPLANTED SUBSTRATES
    ZAPPE, HP
    HU, CM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 1029 - 1034
12345