CHARACTERISTICS OF DEFECT FORMATION IN SILICON AS A RESULT OF HIGH-ENERGY IMPLANTATION OF BORON

被引：0
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作者：
ALBAKKUR, F
DIDYK, AY
KOZLOV, IP
ODZHAEV, VB
PETROV, VV
PROSOLOVICH, VS
SOKHATSKII, AS
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1109 / 1110
页数：2
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