DEFECT DISTRIBUTION IN CRYSTALLINE SILICON IRRADIATED WITH HIGH-ENERGY ELECTRONS

被引：5
|
作者：
YASUDA, K
WADA, T
MASUDA, H
TAKEDA, M
IKUTA, S
机构：
[1] GOVT IND RES INST,NAGOYA,AICHI 462,JAPAN
[2] NAGOYA INST TECHNOL,DEPT ELECTR,NAGOYA,AICHI 466,JAPAN
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 88卷 / 02期
关键词：
D O I：
10.1002/pssa.2210880219
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
15
引用
收藏
页码：543 / 551
页数：9
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