CHARACTERISTICS OF CMOS DEVICES IN HIGH-ENERGY BORON-IMPLANTED SUBSTRATES

被引：7
|
作者：
ZAPPE, HP
HU, CM
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期
关键词：
D O I：
10.1109/16.3361
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1029 / 1034
页数：6
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