MASS BALANCE OF THE REACTIVE ION ETCHING PRODUCTS OF SILICON ON SIO2

被引：0
|
作者：
MAUER, JL [1 ]
SCHWARTZ, GC [1 ]
机构：
[1] IBM CORP, E FISHKILL FACIL, DIV DATA SYST, HOPEWELL JUNCTION, NY 12533 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C88 / C88
页数：1
相关论文
共 50 条
  • [41] Realization of Three-Dimensional Si and SiO2 Nanowall Structures Using Reactive Ion Etching
    Azimi, S.
    Sandoughsaz, A.
    Mohajerzadeh, S.
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2011, 20 (02) : 353 - 354
  • [42] Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method
    Wee, TCL
    Ooi, BS
    Zhou, Y
    Chan, YC
    Lam, YL
    DESIGN, FABRICATION AND CHARACTERIZATION OF PHOTONIC DEVICES, 1999, 3896 : 438 - 444
  • [43] Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching
    Gasvoda, Ryan J.
    Zhang, Zhonghao
    Wang, Scott
    Hudson, Eric A.
    Agarwal, Sumit
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (05):
  • [44] Etching characteristics of SiO2 irradiated with focused ion beam
    Sadoh, T
    Eguchi, H
    Kenjo, A
    Miyao, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 478 - 481
  • [45] Deep reactive ion etching of silicon
    Ayón, AA
    Chen, KS
    Lohner, KA
    Spearing, SM
    Sawin, HH
    Schmidt, MA
    MATERIALS SCIENCE OF MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES, 1999, 546 : 51 - 61
  • [46] REACTIVE ION ETCHING OF ALUMINUM SILICON
    LIGHT, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2225 - 2230
  • [47] REACTIVE ION ETCHING OF SILICON DIOXIDE
    LIGHT, RW
    SEE, FC
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1982, 184 (SEP): : 102 - INOR
  • [48] REACTIVE ION ETCHING OF SILICON DIOXIDE
    LIGHT, RW
    SEE, FC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1152 - 1154
  • [49] Kinetics and Mechanisms of Reactive-Ion Etching of Si and SiO2 in a Plasma of a Mixture of HBr + O2
    Efremov A.M.
    Betelin V.B.
    Kwon K.-H.
    Russian Microelectronics, 2020, 49 (06) : 379 - 384
  • [50] Effects of Silicon Negative Ion Implantation in SiO2
    Vishwakarma, S. B.
    Dubey, S. K.
    Dubey, R. L.
    Yadav, A.
    Jadhav, Vidya
    Bambole, V.
    Sulania, I.
    Kanjilal, D.
    62ND DAE SOLID STATE PHYSICS SYMPOSIUM, 2018, 1942
12345