MASS BALANCE OF THE REACTIVE ION ETCHING PRODUCTS OF SILICON ON SIO2

被引：0
|
作者：
MAUER, JL [1 ]
SCHWARTZ, GC [1 ]
机构：
[1] IBM CORP, E FISHKILL FACIL, DIV DATA SYST, HOPEWELL JUNCTION, NY 12533 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C88 / C88
页数：1
相关论文
共 50 条
  • [31] REACTIVE ION ETCHING OF SIO2 IN THE RECORD GAP OF INDUCTIVE THIN-FILM HEADS
    MACCHIONI, CV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (08) : 2595 - 2599
  • [32] Molecular dynamics simulation for reactive ion etching of Si and SiO2 by SF 5 + ions
    Tinacba, Erin Joy Capdos
    Ito, Tomoko
    Karahashi, Kazuhiro
    Isobe, Michiro
    Hamaguchi, Satoshi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021, 39 (04):
  • [33] STUDY OF REACTIVE ION ETCHING OF SI AND SIO2 FOR CFXCL4-X GASES
    FORTUNO, G
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 1988, 8 (01) : 19 - 34
  • [34] EVALUATION OF RADIATION-DAMAGE ON ELECTRICAL CHARACTERISTICS OF SIO2 DUE TO REACTIVE ION ETCHING
    TSUKAMOTO, A
    MIZUSHIMA, K
    HIDAKA, Y
    OKADA, H
    TERAKAWA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6B): : 3058 - 3062
  • [35] REACTIVE ION-BEAM ETCHING WITH CF4 - CHARACTERIZATION OF A KAUFMAN ION-SOURCE AND DETAILS OF SIO2 ETCHING
    MAYER, TM
    BARKER, RA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 585 - 591
  • [36] Recovery of silicon surface after reactive ion etching of SiO2 using CHF3/C2F6
    Kwon, KH
    Park, HH
    Kim, KS
    Kim, CII
    Sung, YK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (03): : 1611 - 1616
  • [37] Molecular dynamics simulation of Si and SiO2 reactive ion etching by fluorine-rich ion species
    Tinacba, Erin Joy Capdos
    Isobe, Michiro
    Karahashi, Kazuhiro
    Hamaguchi, Satoshi
    SURFACE & COATINGS TECHNOLOGY, 2019, 380
  • [38] INFLUENCE OF THE FLOW, ETCHING TIME AND REACTOR CLEANING METHOD ON THE ETCHING RATE AND SELECTIVITY OF REACTIVE ION ETCHING OF SIO2 PHOTORESIST SYSTEM
    NOVOTNY, Z
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1991, 41 (02) : 191 - 198
  • [39] SI AND SIO2 ETCHING CHARACTERISTICS USING REACTIVE ION ETCHING WITH CF4-CL2 GAS-MIXTURE
    SHIBAGAKI, M
    HORIIKE, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) : 1579 - 1580
  • [40] VERTICAL ETCHING OF THICK SIO2 USING C2F6-BASED REACTIVE ION-BEAM ETCHING
    DUTTA, AK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1456 - 1459
12345