MASS BALANCE OF THE REACTIVE ION ETCHING PRODUCTS OF SILICON ON SIO2

被引：0
|
作者：
MAUER, JL [1 ]
SCHWARTZ, GC [1 ]
机构：
[1] IBM CORP, E FISHKILL FACIL, DIV DATA SYST, HOPEWELL JUNCTION, NY 12533 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C88 / C88
页数：1
相关论文
共 50 条
  • [1] REACTIVE ION-BEAM ETCHING OF SIO2 AND POLYCRYSTALLINE SILICON
    BROWN, DM
    HEATH, BA
    COUTUMAS, T
    THOMPSON, GR
    APPLIED PHYSICS LETTERS, 1980, 37 (02) : 159 - 161
  • [2] ETCHING SIO2 IN A REACTIVE ION-BEAM
    HEATH, BA
    SOLID STATE TECHNOLOGY, 1981, 24 (10) : 75 - &
  • [3] A STUDY OF CONTAMINATION DURING REACTIVE ION ETCHING OF SIO2
    VALENTE, M
    QUEIROLO, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1132 - 1135
  • [4] MAGNETRON-ENHANCED REACTIVE ION ETCHING OF SIO2
    LIN, I
    HINSON, D
    CLASS, W
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C82 - C82
  • [5] Modeling of reactive ion etching for Si/SiO2 systems
    Hamaguchi, S
    Ohta, H
    SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, 2001, : 170 - 173
  • [6] XPS investigation of polymer residues in reactive ion etching of SiO2 over poly-silicon
    Pamler, W., 1600, (A139): : 1 - 2
  • [7] Surface molecular dynamics of Si/SiO2 reactive ion etching
    Hamaguchi, S
    Ohta, H
    VACUUM, 2002, 66 (3-4) : 189 - 195
  • [8] PROCESS OF FORMING TAPERED VIAS IN SIO2 BY REACTIVE ION ETCHING
    ROTHMAN, LB
    MAUER, JL
    SCHWARTZ, GC
    LOGAN, JS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C89 - C89
  • [9] DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - A COMPARISON OF REACTIVE ION ETCHING AND MAGNETRON-ENHANCED REACTIVE ION ETCHING
    GU, T
    DITIZIO, RA
    FONASH, SJ
    AWADELKARIM, OO
    RUZYLLO, J
    COLLINS, RW
    LEARY, HJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 567 - 573
  • [10] TAPERED SIO2 ETCH IN DIODE-TYPE REACTIVE ION ETCHING
    KUDOH, H
    YOSHIDA, T
    FUKUMOTO, M
    OHZONE, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1666 - 1670
12345