MOSI2 LAYER FORMATION BY ION-IMPLANTATION THROUGH METAL TECHNIQUE

被引：6
|
作者：
ZAMBOVA, A
NEDEV, I
机构：
[1] Institute of Microelectronics, 1784 Sofia
来源：
VACUUM | 1992年 / 43卷 / 03期
关键词：
D O I：
10.1016/0042-207X(92)90266-Y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Molybdenum silicide layer formation by means of implantation through metal has been explored. The influence of the energy, dose of implantation, metal layer thickness and annealing conditions on the silicide composition and its resistivity is investigated. It is established that layers with optimum values of sheet resistance (10-12 OMEGA open square-1) could be obtained using As+ doses higher than 8 x 10(15) cm-2, at an energy of 170 keV and with two annealing steps (at 600 and 950-degrees-C). Under these conditions the silicide composition is close to stoichiometric (Si/Mo = 2).
引用
收藏
页码：223 / 226
页数：4
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