MOSI2 LAYER FORMATION BY ION-IMPLANTATION THROUGH METAL TECHNIQUE

被引：6
|
作者：
ZAMBOVA, A
NEDEV, I
机构：
[1] Institute of Microelectronics, 1784 Sofia
来源：
VACUUM | 1992年 / 43卷 / 03期
关键词：
D O I：
10.1016/0042-207X(92)90266-Y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Molybdenum silicide layer formation by means of implantation through metal has been explored. The influence of the energy, dose of implantation, metal layer thickness and annealing conditions on the silicide composition and its resistivity is investigated. It is established that layers with optimum values of sheet resistance (10-12 OMEGA open square-1) could be obtained using As+ doses higher than 8 x 10(15) cm-2, at an energy of 170 keV and with two annealing steps (at 600 and 950-degrees-C). Under these conditions the silicide composition is close to stoichiometric (Si/Mo = 2).
引用
收藏
页码：223 / 226
页数：4
相关论文
共 50 条
  • [31] Formation of MOSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation
    Cheng, XQ
    Wang, RS
    Tang, XJ
    Liu, BX
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 207 (03): : 301 - 307
  • [32] FORMATION OF ALN BY NITROGEN ION-IMPLANTATION
    RAUSCHENBACH, B
    KOLITSCH, A
    RICHTER, E
    THIN SOLID FILMS, 1983, 109 (01) : 37 - 45
  • [33] METASTABLE ALLOY FORMATION BY ION-IMPLANTATION
    POATE, JM
    THIN SOLID FILMS, 1979, 63 (01) : 3 - 3
  • [34] CHARACTERIZATION OF ION-IMPLANTATION THROUGH THIN TI METAL LAYERS ON SI
    FATHY, D
    HOLLAND, OW
    APPLETON, BR
    STEPHENSON, TS
    MATERIALS LETTERS, 1987, 5 (09) : 315 - 321
  • [35] THE PROCESS OF COMPOUNDS FORMATION BY ION-IMPLANTATION
    IWAKI, M
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 104 - 109
  • [36] METASTABLE ALLOY FORMATION BY ION-IMPLANTATION
    POATE, JM
    THIN SOLID FILMS, 1979, 58 (01) : 133 - 143
  • [37] SURFACE MODIFICATION OF BIOMATERIALS THROUGH NOBLE-METAL ION-IMPLANTATION
    BUCHANAN, RA
    LEE, IS
    WILLIAMS, JM
    JOURNAL OF BIOMEDICAL MATERIALS RESEARCH, 1990, 24 (03): : 309 - 318
  • [38] SUPER-HARD CUBIC BN LAYER FORMATION BY NITROGEN ION-IMPLANTATION
    KOMAROV, FF
    PILKO, VV
    YAKUSHEV, VA
    TISHKOV, VS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 94 (03): : 237 - 239
  • [39] ION-IMPLANTATION INTO STRAINED-LAYER SUPERLATTICES
    PICRAUX, ST
    ARNOLD, GW
    MYERS, DR
    DAWSON, LR
    BIEFELD, RM
    FRITZ, IJ
    ZIPPERIAN, TE
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 453 - 460
  • [40] NATURE OF DISORDERED LAYER PRODUCED BY ION-IMPLANTATION
    ZELLAMA, K
    GERMAIN, P
    SQUELARD, S
    BOURGOIN, JC
    PIAGUET, J
    ROBIC, JY
    SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 901 - 905
12345