MOSI2 LAYER FORMATION BY ION-IMPLANTATION THROUGH METAL TECHNIQUE

被引：6
|
作者：
ZAMBOVA, A
NEDEV, I
机构：
[1] Institute of Microelectronics, 1784 Sofia
来源：
VACUUM | 1992年 / 43卷 / 03期
关键词：
D O I：
10.1016/0042-207X(92)90266-Y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Molybdenum silicide layer formation by means of implantation through metal has been explored. The influence of the energy, dose of implantation, metal layer thickness and annealing conditions on the silicide composition and its resistivity is investigated. It is established that layers with optimum values of sheet resistance (10-12 OMEGA open square-1) could be obtained using As+ doses higher than 8 x 10(15) cm-2, at an energy of 170 keV and with two annealing steps (at 600 and 950-degrees-C). Under these conditions the silicide composition is close to stoichiometric (Si/Mo = 2).
引用
收藏
页码：223 / 226
页数：4
相关论文
共 50 条
  • [21] PREDICTION OF THE FORMATION OF BINARY METAL METAL AMORPHOUS-ALLOYS BY ION-IMPLANTATION
    ZHANG, BW
    TAN, ZS
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1988, 7 (07) : 681 - 682
  • [22] The nature of ion milling damage in MoSi2
    Boldt, P
    Weatherly, GC
    Embury, JD
    PHILOSOPHICAL MAGAZINE LETTERS, 1997, 75 (02) : 97 - 103
  • [23] FORMATION OF A NEARLY PURE ALUMINUM LAYER IN BERYLLIUM USING ION-IMPLANTATION
    BROWN, DW
    MUSKET, RG
    MUNIR, ZA
    APPLIED PHYSICS LETTERS, 1989, 54 (04) : 326 - 328
  • [24] FORMATION OF BURIED COSI2 BY ION-IMPLANTATION
    KOHLHOF, K
    MANTL, S
    STRITZKER, B
    JAGER, W
    APPLIED SURFACE SCIENCE, 1989, 38 (1-4) : 207 - 216
  • [25] MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING
    FULKS, RT
    POWELL, RA
    STACY, WT
    ELECTRON DEVICE LETTERS, 1982, 3 (07): : 179 - 181
  • [26] METAL ON POLYMER ION-IMPLANTATION MASK
    TENNANT, DM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 494 - 496
  • [27] IMPROVEMENT OF METAL PROPERTIES BY ION-IMPLANTATION
    HIRVONEN, JK
    CAROSELLA, CA
    KANT, RA
    SINGER, I
    VARDIMAN, R
    RATH, BB
    THIN SOLID FILMS, 1979, 63 (01) : 5 - 10
  • [28] CONDUCTIVE LAYER FORMATION BY HIGH-DOSE SI ION-IMPLANTATION INTO SIO2
    MIYAKE, M
    KIUCHI, K
    APPLIED PHYSICS LETTERS, 1985, 46 (09) : 879 - 881
  • [29] FORMATION OF GAASP BY ION-IMPLANTATION AND ANNEALING
    AINA, O
    PANDE, KP
    APPLIED PHYSICS LETTERS, 1984, 44 (05) : 544 - 546
  • [30] BURIED OXIDE FORMATION BY ION-IMPLANTATION
    STEEPLES, K
    GUERRA, MA
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 530 : 251 - 254
12345