Asymmetric Underlap Dual Material Gate DG-FET for Low Power Analog/RF Applications

This paper presents a systematic comparative study on effect of asymmetric spacer, on Analog/RF performance of Asymmetric Underlap (ASYM-UDL) Dual Material Gate (DMG) DG NMOSFETs. The asymmetric spacer in ASYM-UDLDMG DG NMOSFETs is proposed for the first time and the performance improvement of the device is compared with the Symmetry Underlap (SYM-UDL) DMG DG NMOSFET having symmetric spacer. The performance of the devices is compared in relation to the analog/RF parameters, the on current (I-on), the transconductance (g(m)), the transconductance generation factor (g(m)/I-d), the intrinsic gain (g(m)R(o)), the intrinsic capacitances, the intrinsic resistances, the transport delay and the inductance. The analysis suggested that the average I-on, g(m), and g(m)R(o), increases by 62.150%, 53.113% and 30.837% respectively compared to the SYM-UDL DMG DG NMOSFET.