IMPROVEMENT OF SIO2/SI INTERFACE BY LOW-TEMPERATURE ANNEALING IN WET ATMOSPHERE

被引：22
|
作者：
SANO, N
SEKIYA, M
HARA, M
KOHNO, A
SAMESHIMA, T
机构：
[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240, 174, Fujitsuka-cho
[2] Faculty of Science, Kyushu University, Higashi-ku, Fukuoka 812, 6-10-1, Hakozaki
[3] Max-Planck-Institut für Festköperforschung, D-70569 Stuttgart
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 16期
关键词：
D O I：
10.1063/1.113918
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A postannealing technique was developed in order to improve the quality of SiO2 films formed by a parallel-plate remote plasma chemical vapor deposition. The wave number of the antisymmetric stretching mode of Si-O-Si bonding in the SiO2 film increased from 1058 to 1069 cm-1 by an annealing in H2O vapor at 270°C. It was estimated that averaged bonding angle of Si-O-Si was widened from 137.8°to 141.0°. The annealing in the H2O vapor ambient at 270°C for 30 min efficiently reduced the interface trap density to 2.0×1010cm-2 eV-1 and the effective oxide charges density from 7×1011 to 5×109 cm-2 for a metal-oxide-semiconductor (MOS) diode using the SiO2 film.© 1995 American Institute of Physics.
引用
收藏
页码：2107 / 2109
页数：3
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