ELIMINATION AND GENERATION OF SI-SIO2 INTERFACE TRAPS BY LOW-TEMPERATURE HYDROGEN ANNEALING

被引：118

作者：

THANH, LD ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] AACHEN TECH UNIV,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 07期

关键词：

D O I：

10.1149/1.2096133

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1797 / 1801

页数：5

共 50 条

[1] LOW-TEMPERATURE ANNEALING OF SURFACE-STATES AT THE SI-SIO2 INTERFACE
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