ELIMINATION AND GENERATION OF SI-SIO2 INTERFACE TRAPS BY LOW-TEMPERATURE HYDROGEN ANNEALING

被引：118
|
作者：
THANH, LD [1 ]
BALK, P [1 ]
机构：
[1] AACHEN TECH UNIV,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 07期
关键词：
D O I：
10.1149/1.2096133
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1797 / 1801
页数：5
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