THE ELECTRON-VOLTAIC EFFECT IN GERMANIUM AND SILICON P-N JUNCTIONS

被引：0
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作者：
RAPPAPORT, P
LOFERSKI, JJ
LINDER, EG
机构：
来源：
RCA REVIEW | 1956年 / 17卷 / 01期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：100 / 128
页数：29
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