Effect of deep dislocation levels in silicon on the properties of p-n junctions

被引：0

作者：

Zakharov, A.G. ^{[1
]}

Dudko, V.G. ^{[1
]}

Nabokov, G.M. ^{[1
]}

Sechenov, D.A. ^{[1
]}

机构：

[1] V.D. Kalmykov Radio Engineering Inst, Russia

来源：

| 1600年 / 31期

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摘要：

(Edited Abstract)

引用

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[1] EFFECT OF DISLOCATIONS ON PROPERTIES OF P-N JUNCTIONS IN SILICON
PANTELEEV, VA
LAINER, LV
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (05): : 145 - +
[2] PHOTOCAPACITANCE EFFECT IN GAAS P-N JUNCTIONS WITH DEEP IMPURITY LEVELS
GUTKIN, AA
KAGAN, MB
NASLEDOV, DN
KHOLEV, BA
SHAPOSHN.TA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 1006 - +
[3] EFFECT OF DEEP LEVELS DUE TO COPPER ON OPTICAL + ELECTRICAL PROPERTIES OF GAAS P-N JUNCTIONS
PILKUHN, M
RUPPRECHT, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) : 537 - &
[4] INFLUENCE OF DEFORMATION ON PROPERTIES OF SILICON P-N JUNCTIONS
POLYAKOV.AL
SHKLOVSK.VV
SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 163 - +
[5] EFFECT OF DEEP LEVELS ON OPTICAL AND ELECTRICAL PROPERTIES OF COPPER-DOPED GAAS P-N JUNCTIONS
MORGAN, TN
PILKUHN, M
RUPPRECH.H
PHYSICAL REVIEW, 1965, 138 (5A): : 1551 - &
[6] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
CHYNOWETH, AG
PEARSON, GL
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110
[7] EFFECT OF STRESS ON GERMANIUM AND SILICON P-N JUNCTIONS
KANDA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 475 - &
[8] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON
ILES, PA
COPPEN, PJ
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1514 - 1514
[9] MULTIPLICATION IN SILICON P-N JUNCTIONS
MOLL, JL
PHYSICAL REVIEW, 1965, 137 (3A): : A938 - &
[10] p-n junctions in silicon nanowires
Goncher, G.
Solanki, R.
Carruthers, J. R.
Conley, J., Jr.
Ono, Y.
JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (07) : 1509 - 1512

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