Effect of deep dislocation levels in silicon on the properties of p-n junctions

被引：0

作者：

Zakharov, A.G. ^{[1
]}

Dudko, V.G. ^{[1
]}

Nabokov, G.M. ^{[1
]}

Sechenov, D.A. ^{[1
]}

机构：

[1] V.D. Kalmykov Radio Engineering Inst, Russia

来源：

| 1600年 / 31期

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(Edited Abstract)

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