THE ELECTRON-VOLTAIC EFFECT IN GERMANIUM AND SILICON P-N JUNCTIONS

被引：0

作者：

RAPPAPORT, P

LOFERSKI, JJ

LINDER, EG

机构：

来源：

RCA REVIEW | 1956年 / 17卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：100 / 128

页数：29

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