ELECTROREFLECTANCE OF HEAVILY DOPED N-TYPE AND P-TYPE GE NEAR DIRECT ENERGY GAP

被引:7
|
作者
LUKES, F
HUMLICEK, J
机构
关键词
D O I
10.1016/0038-1098(71)90495-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:839 / &
相关论文
共 50 条
  • [11] RELATIONSHIP BETWEEN RESISTIVITY AND TOTAL ARSENIC CONCENTRATION IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
    FAIR, RB
    WEBER, GR
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 280 - 282
  • [12] INVESTIGATION OF REFLECTION OF INFRARED RADIATION FROM HEAVILY DOPED SAMPLES OF N-TYPE AND P-TYPE PBSE
    VINOGRADOVA, MN
    GUNKO, TS
    UKHANOV, YI
    TSELISHC, NS
    SHERSHNE, LM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (10): : 1686 - +
  • [13] THERMOREFLECTANCE AT FUNDAMENTAL GAP OF HEAVILY DOPED N-TYPE INAS
    SENECHAL, RR
    WOOLLEY, JC
    PHYSICAL REVIEW B, 1973, 8 (12): : 5738 - 5746
  • [14] The donor nature of muonium in undoped, heavily n-type and p-type InAs
    King, P. D. C.
    Veal, T. D.
    McConville, C. F.
    King, P. J. C.
    Cox, S. F. J.
    Celebi, Y. G.
    Lichti, R. L.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (07)
  • [15] ANODIC DISSOLUTION OF HEAVILY DOPED N-TYPE GE IN AQUEOUS SOLUTIONS
    GERETH, R
    COWHER, ME
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) : 645 - &
  • [16] THE STRESS DEPENDENCE OF ACOUSTIC PROPERTIES OF HEAVILY DOPED N-TYPE GE
    WATANABE, H
    SOTA, T
    SUZUKI, K
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (25) : 4547 - 4553
  • [17] AN ELECTROREFLECTANCE STUDY OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE IN AQUEOUS-ELECTROLYTES
    BATCHELOR, RA
    HAMNETT, A
    PEAT, R
    PETER, LM
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 266 - 276
  • [18] THE DEPOSITION OF N-TYPE AND P-TYPE INSITU DOPED POLYSILICON BY LPCVD
    GAN, J
    CHU, C
    MCVITTIE, JP
    SARASWAT, KC
    SWANSON, RM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C377 - C377
  • [19] Diffusion of hydrogen in undoped, p-type and n-type doped diamonds
    Saguy, C
    Cytermann, C
    Fizgeer, B
    Richter, V
    Avigal, Y
    Moriya, N
    Kalish, R
    Mathieu, B
    Deneuville, A
    DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 623 - 631
  • [20] Zinc Oxide Grown by ALD from Heavily n-type to p-type Material
    Guziewicz, Elzbieta
    Przezdziecka, Ewa
    Krajewski, Tomasz A.
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,