THE DEPOSITION OF N-TYPE AND P-TYPE INSITU DOPED POLYSILICON BY LPCVD

被引：0
|
作者：
GAN, J [1 ]
CHU, C [1 ]
MCVITTIE, JP [1 ]
SARASWAT, KC [1 ]
SWANSON, RM [1 ]
机构：
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C377 / C377
页数：1
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