MECHANISM OF RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN HEAVILY DOPED GAAS

被引：0

作者：

LITVINOV, VL

LOMAKO, VM

TKACHEV, VD

UKHIN, NA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1971年 / 4卷 / 12期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1928 / &

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