MECHANISM OF RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN HEAVILY DOPED GAAS

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作者：
LITVINOV, VL
LOMAKO, VM
TKACHEV, VD
UKHIN, NA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1971年 / 4卷 / 12期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1928 / &
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