共 50 条
- [31] GENERATION-RECOMBINATION MECHANISM IN CADMIUM TELLURIDE P-N JUNCTIONSJOURNAL DE PHYSIQUE, 1969, 30 (01): : 97 - &LANCON, RMARFAING, Y
- [32] RADIATIVE RECOMBINATION THROUGH DEEP LEVELS IN GAP AT P-N JUNCTIONS AND IN BULK CRYSTALSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (03) : C52 - C52GERSHENZON, MMIKULYAK, RM
- [33] Radiative recombination in a ZnTe p-n junctionJOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1170 - 1174Iodko, VNGribkovskii, VPBelyaeva, AKSuprun-Belevich, YRKetko, ZA
- [34] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICSPROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243SAH, CTNOYCE, RNSHOCKLEY, W
- [35] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN HEAVILY DOPED GALLIUM ARSENIDESOVIET PHYSICS-SOLID STATE, 1964, 6 (05): : 1146 - 1151VUL, BMZAVARITSKAYA, EISHOTOV, AP
- [36] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN HEAVILY DOPED GALLIUM ARSENIDESOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (05): : 1146 - +VUL, BMZAVARITS.EISHOTOV, AP
- [37] LONG-WAVELENGTH EDGE OF THE PHOTOEFFECT AND RECOMBINATION RADIATION OF GAAS P-N JUNCTIONSSOVIET PHYSICS-SOLID STATE, 1964, 5 (12): : 2654 - 2654GUTKIN, AAKOZLOV, MMNASLEDOV, DNSEDOV, VE
- [38] ELECTROLUMINESCENCE OF GE-DOPED REVERSE BIASED GAAS P-N JUNCTIONSBULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (08): : 876 - &POPOVICI, GCONSTANT.C
- [39] NONLINEAR PHOTOEFFECT IN GAAS P-N JUNCTIONSSOVIET PHYSICS-SOLID STATE, 1963, 5 (04): : 831 - 834GUTKIN, AANASLEDOV, DNSEDOV, VE
- [40] PHOTOELECTRIC PROPERTIES OF GAAS P-N JUNCTIONSSOVIET PHYSICS-SOLID STATE, 1963, 4 (09): : 1712 - 1719GUTKIN, AANASLEDOV, DNSEDOV, VETSARENKOV, BV