MECHANISM OF RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN HEAVILY DOPED GAAS

被引：0

作者：

LITVINOV, VL

LOMAKO, VM

TKACHEV, VD

UKHIN, NA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1971年 / 4卷 / 12期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1928 / &

共 50 条

[1] POLARIZATION OF RECOMBINATION RADIATION EMITTED BY HEAVILY DOPED P-N JUNCTIONS IN GAAS
LOMAKO, VM
NOVOSELO.AM
TKACHEV, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1563 - &
[2] ON MECHANISM OF RECOMBINATION RADIATION OF P-N JUNCTIONS IN GAAS
NASLEDOV, DN
TSARENKO.BV
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 302 - &
[3] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION
YUNOVICH, AE
ELISEEV, PG
NAKHODNOVA, IA
ORMONT, AB
OSADCHAYA, LA
STUCHEBNIKOV, VM
SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1496 - 1497
[4] RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS
LUCOVSKY, G
REPPER, CJ
APPLIED PHYSICS LETTERS, 1963, 3 (05) : 71 - 72
[5] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION
YUNOVICH, AE
ELISEEV, PG
NAKHODNO.IA
ORMONT, AB
OSADCHAY.LA
STUCHEBN.VM
SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1496 - +
[6] RADIATIVE RECOMBINATION IN SILICON P-N JUNCTIONS
MICHAELIS, W
PILKUHN, MH
PHYSICA STATUS SOLIDI, 1969, 36 (01): : 311 - +
[7] LIGHT EMISSION OF HEAVILY GE-DOPED GAAS P-N JUNCTIONS
CONSTANTINESCU, C
POPOVICI, G
REVUE ROUMAINE DE PHYSIQUE, 1970, 15 (08): : 853 - +
[8] RADIATIVE RECOMBINATION IN HEAVILY DOPED P-TYPE GAAS
SUSHKOV, VP
MOMA, YA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (10): : 1273 - &
[9] RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN INDIUM PHOSPHIDE
ORMONT, AB
ELISEEV, PG
ISMAILOV, I
YUNOVICH, AE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 534 - +
[10] RADIATIVE RECOMBINATION IN GAP P-N AND TUNNEL JUNCTIONS
LOGAN, RA
GERSHENZON, M
TRUMBORE, FA
WHITE, HG
APPLIED PHYSICS LETTERS, 1965, 6 (06) : 113 - +

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