INVESTIGATION ON HIGH-SPEED PERFORMANCE OF 0.1-MU-M-GATE, ULTRATHIN-FILM CMOS SIMOX

被引：0

作者：

OMURA, Y

NAKASHIMA, S

IZUMI, K

机构：

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 1992年 / E75C卷 / 12期

关键词：

CMOS; SOI; SIMOX; ULTRATHIN; HIGH SPEED;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 0.1-mum-gate CMOS/SIMOX has been successfully fabricated using high quality SIMOX substrates. The propagation delay time for the 0.1-mum-gate CMOS/SIMOX is not so noticeable due to the parasitic resistance of the source and drain regions. We anticipate 0.1-mum-gate CMOS/SIMOX devices with a delay time of less than 20 ps at a supply voltage of 1.5 V by reducing the remaining parasitic resistance and capacitances.

引用

页码：1491 / 1497

页数：7

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