INVESTIGATION ON HIGH-SPEED PERFORMANCE OF 0.1-MU-M-GATE, ULTRATHIN-FILM CMOS SIMOX

被引：0
|
作者：
OMURA, Y
NAKASHIMA, S
IZUMI, K
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1992年 / E75C卷 / 12期
关键词：
CMOS; SOI; SIMOX; ULTRATHIN; HIGH SPEED;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 0.1-mum-gate CMOS/SIMOX has been successfully fabricated using high quality SIMOX substrates. The propagation delay time for the 0.1-mum-gate CMOS/SIMOX is not so noticeable due to the parasitic resistance of the source and drain regions. We anticipate 0.1-mum-gate CMOS/SIMOX devices with a delay time of less than 20 ps at a supply voltage of 1.5 V by reducing the remaining parasitic resistance and capacitances.
引用
收藏
页码：1491 / 1497
页数：7
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