Analysis of Electrical Characteristics According to Fabrication of 500 V Unified Trench Gate Power MOSFET

被引：0
|
作者：
Kang, Ey Goo [1 ]
机构：
[1] Far East Univ, Dept Energy Semicond Engn, Eumseong 27601, South Korea
来源：
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2016年 / 17卷 / 04期
关键词：
Power device; Breakdown voltage; Deep trench; Unified technology; Low on-resistance;
D O I：
10.4313/TEEM.2016.17.4.222
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF6. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.
引用
收藏
页码：222 / 226
页数：5
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