Analysis of Electrical Characteristics According to Fabrication of 500 V Unified Trench Gate Power MOSFET

被引：0
|
作者：
Kang, Ey Goo [1 ]
机构：
[1] Far East Univ, Dept Energy Semicond Engn, Eumseong 27601, South Korea
来源：
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2016年 / 17卷 / 04期
关键词：
Power device; Breakdown voltage; Deep trench; Unified technology; Low on-resistance;
D O I：
10.4313/TEEM.2016.17.4.222
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF6. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.
引用
收藏
页码：222 / 226
页数：5
相关论文
共 50 条
  • [31] Safe Operation Area Of Trench-Gate And Low-Charge Power MOSFET
    Davydov, Georgii G.
    Boychenko, Dmitriy, V
    Pechenkina, Daria, V
    Tararaksin, Alexander S.
    Kritskaya, Tat'yana B.
    Polokhov, Anton M.
    2018 18TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2018, : 315 - 318
  • [32] A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance
    Saxena, Raghvendra S.
    Kumar, M. Jagadesh
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (06) : 1355 - 1359
  • [33] Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer
    Wang, Zhengkang
    Qiao, Ming
    Li, Zhaoji
    Zhang, Bo
    MICROELECTRONICS JOURNAL, 2021, 118
  • [34] Design of Trench Gate GaN Power MOSFET using Al2O3 Gate Oxide
    Kang, Ey Goo
    Kim, Yong Tae
    ASIA-PACIFIC INTERDISCIPLINARY RESEARCH CONFERENCE 2011 (AP-IRC 2011), 2012, 352
  • [35] 200V trench filling type super junction MOSFET with orthogonal gate structure
    Shibata, Takumi
    Noda, Yoshitaka
    Yamauchi, Sboichi
    Nogami, Shoji
    Yamaoka, Tomonori
    Hattori, Yoshiyuki
    Yamaguchi, Hitoshi
    PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 2007, : 37 - +
  • [36] 650 V SiC Trench MOSFET for high-efficiency power supplies
    Siemieniec, Ralf
    Mente, Rene
    Jantscher, Wolfgang
    Kammerlander, David
    Wenzel, Ute
    Aichinger, Thomas
    2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE), 2019,
  • [37] A novel 30V P-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage
    Narazaki, A
    Hisamoto, Y
    Tadokoro, C
    Takeda, M
    Hagino, H
    ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 285 - 288
  • [38] Design and Process Analysis of a Split-Gate Trench Power MOSFET With Bottom-Trench High-k Pillar Superjunction for Enhanced Performance
    Jiang, Yunteng
    Xiao, Zhentao
    Zhang, Zonghao
    Zhang, Junchen
    Wang, Chenxing
    Li, Wenjun
    Huang, Haimeng
    Islam, Aynul
    Yang, Hongqiang
    IEEE ACCESS, 2025, 13 : 26676 - 26683
  • [39] A 100-V trench power MOSFET with taper-shielded gate and non-uniform drift region doping profile
    Deng, Gaoqaing
    Wang, Jun
    Tan, Chen
    Wu, Yifan
    Liang, Shiwei
    Ng, Wai Tung
    IET POWER ELECTRONICS, 2023, 16 (06) : 928 - 936
  • [40] Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications
    Tripathi, Pranav M.
    Soni, Harshit
    Chaujar, Rishu
    Kumar, Ajay
    IET CIRCUITS DEVICES & SYSTEMS, 2020, 14 (06) : 915 - 922
12345