60V-Class Power IC Technology for an Intelligent Power Switch with an Integrated Trench MOSFET

被引：0
|
作者：
Toyoda, Yoshiaki [1 ]
Katakura, Hideaki [1 ]
Ooe, Takatoshi [1 ]
Iwaya, Masanobu [1 ]
Sumida, Hitoshi [1 ]
机构：
[1] Fuji Elect Co Ltd, Matsumoto, Nagano 3900821, Japan
来源：
2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New 60V-class intelligent power switch (IPS) technology implementing a vertical trench MOSFET has been developed for automotive applications. We have realized the method to integrate a 60V-class vertical trench MOSFET with high voltage surge robustness and 5V-and 60V-class lateral planar MOSFETs on one chip. The integrated vertical trench MOSFET is designed by 0.35 mu m-rule in order to reduce its specific on-resistance (Ron.A). As a result, our integrated vertical trench MOSFET has the Ron.A below 0.6m Omega cm(2) which is about 40% Ron.A of the vertical planar MOSFET integrated in the conventional IPS. This paper reports our newly developed 60V-class power IC technology for the IPS.
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页码：147 / 150
页数：4
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